사업소개

미래지향적인 기술력으로 끊임없이 도전하는 기업

BUSINESS사업소개

단결정 장비 사업부 (EPICA)

  • 사업소개
  • 단결정 장비 사업부 (EPICA)

EPICA- Advanced HVPE System

Technology Introduction

EPICA – GaN Template Mass Production System

EPICA – 2 Stack System

EPICA – 2 Stack System

Comparison of Conventional HVPEs and EPICA

구분 Conventional HVPE CVD Based HVPE EPICA HVPE
장비의
기본 형태

Horizontal or Vertical Type

Multi-Stacked Extendable
특징
  • High speed & Bowl Growth
  • Capa. Limitation (양산 불가)
  • 매 공정 후 Reactor Cleaning 공정 필수
  • Large capa. for Templates
  • 공정 전 별도의 외부 장비를 통한 기판 전처리 필수
  • Very Large capa. for Templates
    (@ Multi-stacked Reactors)
  • 연속 공정 가능
    (별도의 외부 Cleaning 장비 운용시)
용량 ≤ 4 inch × 3ea / ≤ 6 inch × 1ea 4 inch × 9ea / 6 inch × 4ea 4 inch × 6ea / 6 inch × 3ea
(@ One Unit Reactor)
최대 성장률 ≤ 150 ㎛/h (Horizontal)
≤ 300 ㎛/h (Vertical)		 ≤ 30 ㎛/h ≤ 120 ㎛/h
20 ㎛ target
표준 공정 시간		 ≥ 150 min
(지속적인 Heater 가동 및 Cleaning 공정 포함)		 ≤ 180 min (추정) ≤ 200 min
(Reactor 승온, 냉각 시간 포함)
H2 gas 사용 및
압력 control		 Not available (or Dangerous) Available (추정) Available
System 운용 비용 Relatively Mid. cost Relatively High cost
(from Initial Process)		 Relatively Low cost

Performance - GaN on 4 inch NSS

NSS

NSS

Thickness STD: 2.72 % @ 5.51 ㎛

NSS

XRC ω-scan
(002) 309.6 arcsec
(102) 370.8 arcsec
Under developing for high quality

Performance – GaN on 4 inch AlN Sputtered PSS

NSS

PSS Cone: 1.75 × 2.75 ㎛
AlN 30 nm By Sputter

NSS

GaN Thickness: 4.82 ㎛

NSS

XRC ω-scan
(002) 158.4 arcsec
(102) 219.6 arcsec
Under developing for high quality

Performance – GaN on 6 inch AlN Sputtered PSS

Performance – GaN on 6 inch AlN Sputtered PSS

XRC ω-scan
(002) 179 arcsec
(102) 268 arcsec

Performance – GaN on 6 inch AlN Sputtered PSS
Performance – GaN on 6 inch AlN Sputtered PSS
Performance – GaN on 6 inch AlN Sputtered PSS

Thickness STD: 2.32 % @ 3.45 ㎛

Performance – GaN on 6 inch AlN Sputtered PSS

Cross-section

System Specification Chart

Division Item Unit Specification
Hardware Reactor Type - Multi-Stacked Structure of Unit Reactor (SUS Chamber)
Dimension [mm] About ＜ 900 × ＜ 700 × ＜ 200 (Unit Reactor)
Capacity 2 inch [ea] 21 / Reactor The number of Reactors (stack) is determined by the customer’s requirements.
4 inch [ea] 6 / Reactor
6 inch [ea] 3 / Reactor
Process Run time [min] ~ 210 (Manual loading, ~ 10 ㎛ target)
Max. Temperature [℃] 1,150 (@ Heater Zone)
Temp. Ramping rate [℃/min] ~ 50 (≤ 800 ℃ Heating), ~ 10 (Avg. Cooling)
Rotation speed [RPM] About 15
Process Growth rate [㎛/hr] 2 ~ 120
WIW, WTW thickness STD % ≤ 2
WIW, WTW sheet resistance STD % ≤ 2
Doping range [ N / ㎤] 5 × 1017 ~ 2 × 1019
H2 carrier Gas Option Available (by the customer’s requirements)
Reactor Pressure Control Option Available (by the customer’s requirements)

Intellectual Properties

No. 발명 명칭 국적 출원번호 등록여부 등록번호
1 웨이퍼 회전 장치 대한민국 10-2017-0036204 등록 10-1885026
2 화학기상증착용반응기 및 이를 포함하는 화학기상증착장치 대한민국 10-2017-0047089 등록 10-2008056
3 웨이퍼 회전 장치 PCT PCT/KR2018/002773 출원 완료 -
4 화학기상증착용반응기 및 이를 포함하는 화학기상증착장치 PCT PCT/KR2018/002774 출원 완료 -