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EPICA Division

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EPICA- Advanced HVPE System

Technology Introduction

EPICA – GaN Template Mass Production System

EPICA – 2 Stack System

EPICA – 2 Stack System

Comparison of Conventional HVPEs and EPICA

Division Conventional HVPE CVD Based HVPE EPICA HVPE
Standard
Shapes

Horizontal or Vertical Type

Multi-Stacked Extendable
Features
  • High speed & Bowl Growth
  • Capa. Limitation (M.P. not available)
  • Reactor Cleaning Process is indispensable after every growth
  • Large capa. for Templates
  • Initial process of Substrate by another system is indispensable before every growth process
  • VVery Large capa. for Templates (@ Multi-stacked Reactors)
  • Continuous growth process (another cleaning system is needed)
Capacity ≤ 4 inch × 3ea / ≤ 6 inch × 1ea 4 inch × 9ea / 6 inch × 4ea 4 inch × 6ea / 6 inch × 3ea
(@ Unit Reactor)
Max. Growth Rate ≤ 150 ㎛/h (Horizontal)
≤ 300 ㎛/h (Vertical)		 ≤ 30 ㎛/h ≤ 120 ㎛/h
20 ㎛ target
Process time		 ≥ 150 min
(On going Heating & included Cleaning Process)		 ≤ 180 min (surmised) ≤ 200 min
(included Reactor Cooling)
H2 carrier gas & Pressure control Not available (or Dangerous) Available (surmised) Available
System operation cost Relatively Mid. cost Relatively High cost
(from Initial Process)		 Relatively Low cost

Performance - GaN on 4 inch NSS

NSS

NSS

Thickness STD: 2.72 % @ 5.51 ㎛

NSS

XRC ω-scan
(002) 309.6 arcsec
(102) 370.8 arcsec
Under developing for high quality

Performance – GaN on 4 inch AlN Sputtered PSS

NSS

PSS Cone: 1.75 × 2.75 ㎛
AlN 30 nm By Sputter

NSS

GaN Thickness: 4.82 ㎛

NSS

XRC ω-scan
(002) 158.4 arcsec
(102) 219.6 arcsec
Under developing for high quality

Performance – GaN on 6 inch AlN Sputtered PSS

Performance – GaN on 6 inch AlN Sputtered PSS

XRC ω-scan
(002) 179 arcsec
(102) 268 arcsec

Performance – GaN on 6 inch AlN Sputtered PSS
Performance – GaN on 6 inch AlN Sputtered PSS
Performance – GaN on 6 inch AlN Sputtered PSS

Thickness STD: 2.32 % @ 3.45 ㎛

Performance – GaN on 6 inch AlN Sputtered PSS

Cross-section

System Specification Chart

Division Item Unit Specification
Hardware Reactor Type - Multi-Stacked Structure of Unit Reactor (SUS Chamber)
Dimension [mm] About ＜ 900 × ＜ 700 × ＜ 200 (Unit Reactor)
Capacity 2 inch [ea] 21 / Reactor The number of Reactors (stack) is determined by the customer’s requirements.
4 inch [ea] 6 / Reactor
6 inch [ea] 3 / Reactor
Process Run time [min] ~ 210 (Manual loading, ~ 10 ㎛ target)
Max. Temperature [℃] 1,150 (@ Heater Zone)
Temp. Ramping rate [℃/min] ~ 50 (≤ 800 ℃ Heating), ~ 10 (Avg. Cooling)
Rotation speed [RPM] About 15
Process Growth rate [㎛/hr] 2 ~ 120
WIW, WTW thickness STD % ≤ 2
WIW, WTW sheet resistance STD % ≤ 2
Doping range [ N / ㎤] 5 × 1017 ~ 2 × 1019
H2 carrier Gas Option Available (by the customer’s requirements)
Reactor Pressure Control Option Available (by the customer’s requirements)